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PRODUCTS > Crystalline Silicon Battery Equipment > HJT Reactive Plasma Deposition (RPD)

HJT Reactive Plasma Deposition (RPD)

Equipment Name

· HJT Reactive Plasma Deposition (RPD)

Equipment Model

· RPD5500A

Advantages

· High dissociation rate coating mechanism with almost no ion bombardment to maintain good interface characteristics where high carrier mobility can be reached in this reliable coating technology.


Equipment Application

· Transparent Conductive Layer (TCO) coating.

Process

· High free state target ions sublimated by low energy electron beam recombine on the substrate to form a high quality film.



Features

· The world top one heterojunction solar cell manufacturer only chooses RPD equipment.

· Up to 80% indium dissociation rate, achieving high quality transparent conductive film.

· The coating process is less than 30eV ion bombardment, does not damage the amorphous silicon film, and maintains good interface characteristics.

· High carrier mobility and low carrier concentration ensure excellent conductivity and high long-wavelength transmittance.

· IWO carrier mobility up to 80cm2/V.s, where ICO carrier mobility can be as high as 130cm2/V.s.

· Long-term mass production verification of HJT cell manufacturers, the conversion efficiency of HJT solar cell manufactured by RPD is 0.4% more than made by other equipment.

· Linear type and loop type RPD equipment can be provided according to customer request.   

Parameters


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